Samsung Reportedly Turns to TSMC for Nvidia Custom HBM

Seoul, 19 October 2026 – Samsung Electronics is reportedly preparing to use Taiwan Semiconductor Manufacturing Company’s 3-nanometre process for the base die in custom high-bandwidth memory being developed for Nvidia. The reported design, known as NVHBM, would pair the external logic process with Samsung’s sixth-generation 1c DRAM core dies for a next-generation product based on HBM4E architecture.

For Asian semiconductor investors, the significance lies in a possible shift from vertically integrated manufacturing towards a more modular supply chain built around Nvidia’s specifications. The arrangement has not been publicly confirmed by Samsung, TSMC or Nvidia, so it should be treated as an industry report rather than a completed commercial agreement. If implemented, it would deepen the links among Korean memory, Taiwanese foundry capacity and US AI-chip design.